دانلود گزارش کارورزی و کار آموزی

چکیده : 

The currentpaperpresentsatheoreticalanalysisofNi-63nuclearmicro-batterybasedonawide-band

gap semiconductorGaNthin-film coveredwiththinNi/Au films toformSchottkybarrierforcarrier

separation. ThetotalenergydepositioninGaNwascalculatedusingMonteCarlomethodsbytakinginto

account thefullbetaspectralenergy,whichprovidedanoptimaldesignonSchottkybarrierwidth.

The calculatedresultsshowthatan8 μm thickSchottkybarriercancollectabout95%oftheincidentbeta

particle energy.ConsideringtheactuallimitationsofcurrentGaNgrowthtechnique,aFe-doped

compensation techniquebyMOCVDmethodcanbeusedtorealizethen-typeGaNwithacarrier

concentration of11015 cm−3, bywhichaGaNbasedSchottkybetavoltaicmicro-batterycanachievean

energy conversionefficiency of2.25%basedonthetheoreticalcalculationsofsemiconductordevice

physics.